CVD-Synthesized Gallium-Oxide Thin Films as Protective Coating for Energy Storage Applications

Authors

  • Iqra Irfan Iberian Centre for Research in Energy Storage - CIIAE Author
  • Kashif Mushtaq Iberian Centre for Research in Energy Storage - CIIAE Author
  • Rahul Agrawal Iberian Centre for Research in Energy Storage - CIIAE Author
  • Breogán Pato-Doldán Iberian Centre for Research in Energy Storage - CIIAE Author

DOI:

https://doi.org/10.66173/jenmas.2026.39

Keywords:

Gallium Oxide, Chemical vapor deposition, Thermal Energy Storage System, Coating Materials

Abstract

The rapid growth of renewable energy integration, particularly Concentrated Solar Power (CSP), has increased demand for reliable and efficient thermal energy storage (TES) systems. Unlike photovoltaics, CSP can provide dispatchable electricity using molten salt, typically an eutectic Nano₃–KNO₃ mixture, due to its broad operating range (200–600 °C), low cost, and scalability. However, long-term operation leads to corrosion and degradation of structural alloys such as stainless steels, reducing component lifespan and increasing maintenance costs. Protective coating materials with high chemical and thermal stability are therefore essential for material compatibility and TES durability. Gallium oxide (Ga₂O₃) emerged as an interesting candidate because of its wide band gap ranging from 4.8 to 5.3 eV, high breakdown field ca. 8 MVcm-1, offering exceptional thermal and chemical stability, even at elevated temperature ca. 1800 °C, which can offer durable, effective, and efficient heat-resistant materials for TES applications. In this presented work, thin films of Ga₂O₃ are synthesized with an apparent roughness of ~1.8 nm as determined from AFM step-height profiles (mean of five measurements; ±0.4 nm) on sapphire substrate using a simple three-zone chemical vapor deposition (CVD) system, as it is cost-effective, scalable, and produces high-quality films. The preheating strategy strongly influenced surface roughness, with moderate preheating (500 °C) yielding smoother films than high-temperature preheating (750 °C). CVD enables precise control of film thickness, crystallinity, and microstructure, underscoring its potential to produce Ga₂O₃ barrier layers that resist molten-salt infiltration and thermal stress. The study provides a controlled growth process and microstructural optimization of Ga₂O₃ films, which will serve as a basis for future corrosion studies and durability testing of functional performance, which are part of the ongoing research. It is also focused on single- and multilayer architectures and protective overlayers to further enhance the corrosion resistance and interfacial stability of TES systems under harsh molten-salt cycling.

Author Biographies

  • Iqra Irfan, Iberian Centre for Research in Energy Storage - CIIAE

    Junior Researcher at Department of Thermal Energy Storage, Iberian Centre for Research in Energy Storage - CIIAE, Caceres, 10003, Spain.

  • Kashif Mushtaq, Iberian Centre for Research in Energy Storage - CIIAE

    Senior Researcher at the Department of Thermal Energy Storage, Iberian Centre for Research in Energy Storage - CIIAE, Caceres, 10003, Spain.

  • Rahul Agrawal, Iberian Centre for Research in Energy Storage - CIIAE

    Junior researcher at Department of Thermal Energy Storage, Iberian Centre for Research in Energy Storage - CIIAE, Caceres, 10003, Spain.

  • Breogán Pato-Doldán, Iberian Centre for Research in Energy Storage - CIIAE

    Director of Department of Thermal Energy Storage, Iberian Centre for Research in Energy Storage - CIIAE, Caceres, 10003, Spain.

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Published

2026-03-23

Data Availability Statement

The original contributions presented in this study are included in the article. Further inquiries can be directed to the corresponding authors.

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How to Cite

[1]
I. Irfan, K. Mushtaq, R. Agrawal, and B. Pato-Doldán, “CVD-Synthesized Gallium-Oxide Thin Films as Protective Coating for Energy Storage Applications”, JENMAS, vol. 2, no. 1, pp. 39–54, Mar. 2026, doi: 10.66173/jenmas.2026.39.